FGB20N60SFD 查看數據表（PDF） - Fairchild Semiconductor
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FGB20N60SFD Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 19. Forward Characteristics
40
Figure 20. Typical Reverse Current vs.
Reverse Voltage
100
10
TJ = 125oC
1
TJ = 75oC
TJ = 25oC
0.1
0
1
2
3
4
Forward Voltage, VF [V]
Figure 21. Stored Charge
250
10
TJ = 125oC
1
TJ = 75oC
0.1
0.01
1E-3
0
TJ = 25oC
100 200 300 400 500 600
Reverse Voltage, VR [V]
Figure 22. Reverse Recovery Time
150
200
200A/μs
150
100
di/dt = 100A/μs
50
120
di/dt = 100A/μs
90
200A/μs
60
30
0
0
5
10
15
20
Forward Current, IF [A]
0
5
10
15
20
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.01
1E-5
0.02
0.01
single pulse
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E- 3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
7
FGB20N60SFD_F085 Rev. C1
www.fairchildsemi.com
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