BSZ042N06NS(2020) 查看數據表（PDF） - Infineon Technologies

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BSZ042N06NS
(Rev.:2020)

OptiMOS™ Power-Transistor, 60V

Infineon Technologies 

OptiMOSTMPower-Transistor,60V

BSZ042N06NS

Table7Reversediode

Parameter

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time1)

Reverse recovery charge1)

Symbol

IS

IS,pulse

VSD

trr

Qrr

Min.

-

-

-

-

-

Values

Typ. Max.

-

74

-

392

0.9 1.2

33 53

33 -

Unit Note/TestCondition

A TC=25°C

A TC=25°C

V VGS=0V,IF=20A,Tj=25°C

ns VR=30V,IF=20A,diF/dt=100A/µs

nC VR=30V,IF=20A,diF/dt=100A/µs

1) Defined by design. Not subject to production test.

Final Data Sheet

5

Rev.2.4,2020-03-13

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