NE85634-T1-A 查看數據表（PDF） - California Eastern Laboratories.

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NE85634-T1-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

California Eastern Laboratories. 

DATA SHEET

NPN SILICON RF TRANSISTOR

NE85634

/

2SC3357

JEITA

Part No.

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

FEATURES

• Low noise and high gain

NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz

• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)

• Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

NE85634-A

2SC3357-A

NE85634-T1-A

2SC3357-T1-A

Quantity

25 pcs (Non reel)

1 kpcs/reel

Supplying Form

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

20

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

Total Power Dissipation

IC

100

mA

P Note

tot

1.2

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Document No. PU10211EJ01V0DS (1st edition)

(Previous No. P10357EJ4V1DS00)

Date Published January 2003 CP(K)

The mark • shows major revised points.

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