STF9N60M2 查看數據表（PDF） - STMicroelectronics
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STF9N60M2
STMicroelectronics
STF9N60M2 Datasheet PDF : 15 Pages
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Electrical characteristics
2
Electrical characteristics
STF9N60M2, STFI9N60M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 3 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.72 0.78 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
320
- pF
-
18
- pF
-
0.68
- pF
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
88
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 5.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
-
10
- nC
-
2
- nC
-
5.1
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 300 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and Figure 19)
Min.
-
-
-
-
Typ.
8.8
7.5
22
13.5
Max. Unit
-
ns
-
ns
-
ns
-
ns
4/15
DocID024728 Rev 2
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