STF9N60M2 查看數據表（PDF） - STMicroelectronics

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STF9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

STMicroelectronics 

STF9N60M2, STFI9N60M2

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 5.5 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 5.5 A, di/dt = 100 A/µs -

VDD = 60 V (see Figure 16)

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.5 A, di/dt = 100 A/µs -

VDD = 60 V, Tj = 150 °C

-

(see Figure 16)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

5.5 A

22 A

1.6 V

265

ns

1.65

µC

12.5

A

377

ns

2.3

µC

12.2

A

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