2SK3820 查看數據表（PDF） - ON Semiconductor

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2SK3820

N-Channel Power MOSFET 100V, 26A, 60mΩ, TO-263-2L

ON Semiconductor 

2SK3820

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=100V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=13A

ID=13A, VGS=10V

ID=13A, VGS=4V

VDS=20V, f=1MHz

See Fig.2

VDS=50V, VGS=10V, ID=26A

IS=26A, VGS=0V

Ratings

Unit

min

typ

max

100

V

1

μA

±10

μA

1.2

2.6

V

11

19

S

45

60 mΩ

56

80 mΩ

2150

pF

160

pF

110

pF

20

ns

34

ns

185

ns

62

ns

44

nC

7.8

nC

9.8

nC

1.0

1.2

V

Fig.1 Unclamped Inductive Switching Test Circuit

≥50Ω

D

L

RG

G

10V

0V

50Ω

2SK3820

S

VDD

Fig.2 Switching Time Test Circuit

VIN

10V

0V

VIN

VDD=50V

ID=13A

RL=3.85Ω

PW=10μs

D.C.≤1%

D

VOUT

G

2SK3820

P.G

50Ω

S

No.8147-2/6

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