FGH30N6S2 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FGH30N6S2 Datasheet PDF : 8 Pages
| |||
Typical Performance Curves (Continued)
175
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
150
125
TJ = 25oC
100
75
50
25 TJ = 125oC
TJ = -55oC
0
5 6 7 8 9 10 11 12 13 14 15 16
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
16
IG(REF) = 1mA, RL = 25Ω, TJ = 25oC
14
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1.0
0.8
ICE = 24A
0.6
0.4
ICE = 12A
0.2
ICE = 6A
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
1.0
10
100
1000
RG, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
1.4
FREQUENCY = 1MHz
1.2
1.0
0.8
CIES
0.6
0.4
COES
0.2
0.0
0
CRES
10 20 30 40 50 60 70 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
90 100
Figure 17. Capacitance vs Collector to Emitter
Voltage
3.5
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
3.0
2.5
ICE = 24A
ICE = 12A
2.0
ICE = 6A
1.5
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Share Link: 