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P6KE10CA 查看數據表(PDF) - MDE Semiconductor

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P6KE10CA Datasheet PDF : 3 Pages
1 2 3
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P6KE SERIES
Pig.1 - Peak Pulse Power Rating Curve
Non-repetitive Pulse
100
Waveform shown in Fig.
3
10
1
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
td - Pulse Width (sec.)
10ms
150
100
50
00
Fig.3 - Pulse Waveform
tr = 10µsec.
Peak Value
IPPM
Half Value- IPPM
2
TJ = 25°C
Pulse Width(td)is
defined
as the point where the
peak current decays to
50% of IPPM
10/1000µsec.Waveform
as defined by R.E.A.
td
1.0
t - Ti2m.0e(3m.0s)
3 4.0
4.0
Fig.5 - steady State Power Derating Curve
5.00
L=0.375" (9.5mm)
4.38
Lead Lengths
60 HZ Resistive or
Inductive Load
3.75
3.13
2.50
1.88
1.25
0.63
0.000
0
1.6x1.6x.040"
(40x40x1mm)
Copper Heat Sinks
25
50
75
100
125
150
175
200
TL - Lead Temperature (°C
Fig.7 - Typical Reverse Leakage Characteristics
1000
100
Measured at Devices
Stand-off Voltage,VWM
10
TA = 25°C
1
0.1
0.01
Fig.2 - Pulse Derating Curve
100
87.5
75
62.5
50
37.5
25
12.5
0
0
0.2
0.4
0.6
0.8
1
1.2
TA - Ambient Temperature
10000Fig.4 - Typ.Junction Capacitance Uni-
6000
TJ = 25°C
f = 1.0MHZ
Measured at
Zero Bias
Vsig = 50mVp-p
1000
100
Measured at
Stand-Off
Voltage, VWM
10
1000
1.0
1
100 200
VWM - Reverse Stand-Off Voltage (V)
Fig.6 - Max.Non-Repetitive Forward Surge
200
Uni-Directional Only
100
TJ = TJ max.
8.3ms Single Half Sine-
Wave
50
10
1
5
10
50
100
Number of Cycles at 60
Fig. 8 - Typ.Transient Thermal Impedance
100
10
1
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V(BR) - Breakdown Voltage (V)
0.1
0
0.2
0.4
0.6
0.8
1
1.2
tp-Pulse Duration (sec)

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