74HCT157DR2G 查看數據表（PDF） - ON Semiconductor
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74HCT157DR2G Datasheet PDF : 9 Pages
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74HCT157
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
VCC
– 55 to
(V)
25_C v 85_C v 125_C Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 4)
4.5
21
26
32
ns
tPLH,
tPHL
Maximum Propagation Delay, Select to Output Y
(Figures 2 and 4)
4.5
22
28
33
ns
tPLH,
tPHL
Maximum Propagation Delay, Output Enable to Output Y
(Figures 3 and 4)
4.5
20
25
30
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
4.5
15
19
22
ns
Cin Maximum Input Capacitance
−
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Package)*
33
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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