MCP1703A
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures,
TJ (Note 7) of -40°C to +125°C.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Dropout Voltage
Note 1, Note 5
VDROPOUT
—
—
—
—
—
330
650
mV IL = 250 mA, VR = 5.0V
525
725
mV IL = 250 mA, 3.3V ≤ VR < 5.0V
625
975
mV IL = 250 mA, 2.8V ≤ VR < 3.3V
750
1100
mV IL = 250 mA, 2.5V ≤ VR < 2.8V
—
—
mV VR < 2.5V, See Maximum Output
Current Parameter
Output Delay Time
Output Noise
TDELAY
—
600
—
µs
VIN = 0V to 6V, VOUT = 90% VR,
RL = 50Ω resistive
eN
—
0.3
µV/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
Power Supply Ripple
Rejection Ratio
PSRR
—
35
—
dB
f = 100 Hz, COUT = 1 µF, IL = 10 mA,
VINAC = 200 mV pk-pk, CIN = 0 µF,
VR = 5.0V
Thermal Shutdown Protection
TSD
—
150
—
°C
Note 1:
2:
3:
4:
The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) x 106/(VR x ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, qJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambi-
ent temperature is not significant.
TEMPERATURE SPECIFICATIONS(1)
Parameters
Sym
Min
Typ
Max Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
TJ
-40
Maximum Junction Temperature
TJ
—
Storage Temperature Range
TA
-65
Thermal Package Resistance (Note 2)
—
+125 °C Steady State
—
+150 °C Transient
—
+150 °C
Thermal Resistance, 3LD SOT-223
θJA
—
θJC
—
62
15
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-23A
θJA
—
θJC
—
336
110
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-89
θJA
—
θJC
—
180
52
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 8LD 2x3 DFN
θJA
—
θJC
—
70
13.4
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
DS25122A-page 4
© 2012 Microchip Technology Inc.