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FDPF13N50FT(2007) 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FDPF13N50FT
(Rev.:2007)
Fairchild
Fairchild Semiconductor Fairchild
FDPF13N50FT Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP13N50F
Device
FDP13N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF13N50FT
FDPF13N50FT
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
500
ID = 250µA, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, TC = 125oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 20V, ID = 6A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 13A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 13A
RG = 25
-
-
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
Qrr
Notes:
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0V, ISD = 12A
VGS = 0V, ISD = 12A
dIF/dt = 100A/µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 9.5mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 12A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
(Note 4)
-
Typ.
-
0.7
-
-
-
-
0.42
13.3
1450
198
14.5
30
8
12
28
54
75
47
-
-
-
154
0.45
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0
V
0.54
-
S
1930 pF
265 pF
22
pF
39
nC
-
nC
-
nC
65
ns
120
ns
160
ns
105
ns
12
A
48
A
1.5
V
-
ns
-
µC
FDP13N50F / FDPF13N50FT Rev.
2
www.fairchildsemi.com

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