NE52118(1999) 查看數據表（PDF） - NEC => Renesas Technology

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NE52118
(Rev.:1999)

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

NEC => Renesas Technology 

PRELIMINARY DATA SHEET

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

NE52118

L to S BAND LOW NOISE AMPLIFIER

NPN GaAs HBT

FEATURES

• For Low Noise & High Gain amplifiers

NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)

OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)

• 4-pin super minimold package

• Grounded Emitter Transistor

ORDERING INFORMATION (PLAN)

Part Number

NE52118-T1

Package

4-pin super minimold

Marking

V41

Supplying Form

Embossed tape 8 mm wide.

Pin 3, pin 4 face to perforation side of the tape.

Qty 3 kp/reel.

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE52118)

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Collector to Emitter Voltage

VCEO

5.0

V

Collector to Base Voltage

VCBO

3.0

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

7

mA

Base Current

IB

0.3

mA

Total Power Dissipation

Ptot

30

mW

Junction Temperature

Tj

+125

°C

Storage Temperature

Tstg

–65 to +125

°C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14544EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

©

1999

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