NE52118-T1(1999) 查看數據表（PDF） - NEC => Renesas Technology
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NE52118-T1 Datasheet PDF : 12 Pages
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RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter
Collector to Emitter Voltage
Collector Current
Symbol
VCE
IC
MIN.
1.5
−
TYP.
2.0
3
NE52118
MAX.
Unit
3.0
V
6
mA
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Emitter to Base Leak Current
IEBO
Collector to Base Leak Current
ICBO
Collector to Emitter Leak
ICEO
Current
DC current gain
hFE
Base to Emitter Forward Voltage VFBE
Base to Collector Forward
Voltage
VFBC
Noise Figure
NF
Associated Gain
Ga
Out Third-Order Distortion
Intercept Point
OIP3
Noise Figure
NF
Associated Gain
Ga
Test Conditions
VEBO = 3 V
VCBO = 3 V
VCEO = 5 V
VCE = 2 V, IC = 3 mA
IBE = 100 µA
IBC = 100 µA
VCE = 2 V, IC = 3 mA,
f = 2 GHz,
ZS = ZL = 50 Ω
VCE = 2 V, IC = 5 mA,
f = 2 GHz, ZS = ZL = 50 Ω
MIN.
−
−
−
50
1.0
0.7
−
13.5
−
−
−
TYP.
0.2
0.2
0.5
90
1.2
1.0
1.0
15
15
1.0
16.3
MAX.
Unit
1.0
µA
1.0
µA
2.0
µA
140
−
1.4
V
1.3
V
1.5
dB
−
dB
−
dBm
−
dB
−
dB
2
Preliminary Data Sheet P14544EJ1V0DS00
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