NE52118(1999) 查看數據表（PDF） - NEC => Renesas Technology

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NE52118
(Rev.:1999)

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

NEC => Renesas Technology 

GAIN CHARACTERISTICS

INSERTION POWER GAIN, MAXIMUM AVAILABLE

POWER GAIN, MAXIMUM STABLE POWER GAIN vs.

FREQUENCY

40

VCE = 2 V

35

IC = 3 mA

30

25

MSG

20

lS21el2

15

MAG

10

5

0

0.1

1.0

10.0

Frequency f (GHz)

INSERTION POWER GAIN, MAXIMUM AVAILABLE

POWER GAIN, MAXIMUM STABLE POWER GAIN vs.

COLLECTOR CURRENT

30

f = 1 GHz

VCE = 2 V

25

20

MSG

lS21el2

15

10

5

0

1

10

100

Collector Current IC (mA)

NE52118

INSERTION POWER GAIN, MAXIMUM AVAILABLE

POWER GAIN, MAXIMUM STABLE POWER GAIN vs.

COLLECTOR CURRENT

30

f = 2 GHz

VCE = 2 V

25

20

MSG

lS21el2

15

10

5

0

1

10

100

Collector Current IC (mA)

4

Preliminary Data Sheet P14544EJ1V0DS00

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