NE52118 查看數據表（PDF） - NEC => Renesas Technology
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NE52118 Datasheet PDF : 7 Pages
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L TO S BAND NE52118
LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
• HIGH POWER GAIN:
GA = 15 dB TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• LOW NOISE:
NF = 1.0 dB TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• OIP3 = 15 dBm TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• 4 PIN SUPER MINI MOLD PACKAGE
• GROUNDED EMITTER TRANSISTOR
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 18
2.1 ± 0.2
1.25 ± 0.1
0.3+-00..1005
(LEADS 2, 3, 4)
2.0 ± 0.2 0.65
2
0.60
1
0.4+-00..1005
0.3
3 0.65
1.3
0.65
4
0.9 ± 0.1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
Ga
OIP3
IEBO
ICBO
ICEO
hFE
VFBE
VFBC
PARAMETERS AND CONDITIONS
Noise Figure at VCE = 2 V, f = 2 Ghz, ZS = ZL = 50 Ω
IC = 3 mA
IC = 5 mA
Associated Gain at VCE = 2 V, f = 2 Ghz, ZS = ZL = 50 Ω
IC = 3 mA
IC = 5 mA
Out Third - Order Distortion Intercept Point at VCE = 2 V,
f = 2 Ghz, ZS = ZL = 50 Ω, IC = 3 mA
Emitter to Base Leakage Current at VEBO = 3 V
Collector to Base Leakage Current at VCBO = 3 V
Collector to Emitter Leakage Current, VCEO = 5 V
DC Current Gain at VCE = 2 V, IC = 3 mA
Base to Emitter Forward Voltage at IBE = 100 µA
Base to Collector Forward Voltage at IBE = 100 µA
UNITS
dB
dB
dBm
µA
µA
µA
—
V
V
MIN
—
—
—
13.5
—
—
—
—
—
50
1.0
0.7
0 to 0.1
+0.10
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Emitter
4. Collector
NE52118
18
TYP
1.0
1.0
—
15
16.3
15
0.2
0.2
0.5
90
1.2
1.0
MAX
1.5
—
—
—
—
—
1.0
1.0
2.0
140
1.4
1.3
California Eastern Laboratories
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