NE52118 查看數據表（PDF） - NEC => Renesas Technology
零件编号
产品描述 (功能)
生产厂家
NE52118 Datasheet PDF : 7 Pages
| |||
NE52118
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCEO Collector to Emitter Voltage V
5.0
VCBO Collector to Base Voltage
V
3.0
VEBO Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
7
IB
Base Current
mA
0.3
PT
Total Power Dissipation
mW
30
Tj
Junction Temperature
°C
+125
TSTG Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any of these parameters
may result in permanent damage.
RECOMMENDED
OPERATING CONDITIONS (TA = +25°C)
SYMBOLS
PARAMETERS
UNITS MIN. TYP. MAX.
VCE Collector to Emitter Voltage V 1.5 2.0 3.0
IC
Collector Current
mA - 3 6
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
50
40
30
20
10
0
0
25
50
75
100 125 150
Ambient Temperature, TA (ºC)
ORDERING INFORMATION
PART
NUMBER
QUANTITY
NE52118-T1
3 K pcs/Reel
Note: 8-mm wide embossed tape, pin 3 (Emitter),
pin 4 (Collector) face perforated side of tape.
COLLECTOR CURRENT VS.
DC BASE VOLTAGE
10
VCE = 2 V
8
6
4
2
0
0
0.5
1.0
1.5
DC Base Voltage, VBE (V)
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
10
8
6
50 µA
40 µA
4
30 µA
2
20 µA
IB = 10 µA
0
0
1
2
3
4
5
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN VS.
COLLECTOR CURRENT
1000
VCE = 2 V
100
10
1
0.1
1
10
Collector Current, IC (mA)
Share Link: 