MXSMBJ2K3.3 查看數據表（PDF） - Microsemi Corporation

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MXSMBJ2K3.3

2 kW Surface Mount Transient Voltage Suppressor

Microsemi Corporation 

MSMBG2K3.0 – MSMBG2K5.0,

MSMBJ2K3.0 – MSMBJ2K5.0

Available

2 kW Surface Mount

Transient Voltage Suppressor

DESCRIPTION

The MSMBG(J)2K3.0 – MSMBG(J)2K5.0 series of surface mount 2.0 kilowatt transient voltage

suppressors provide a selection of standoff voltages (VWM) from 3.0 to 5.0 volts. These high-

reliability controlled devices feature unidirectional construction. The SMBG Gull-wing design

in the DO-215AA package is ideal for visible solder connections. The SMBJ J-bend design in

the DO-214AA package is ideal for greater PC board mounting density. It is also available as

RoHS compliant.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

• High reliability upscreened devices with wafer fabrication and assembly lot traceability.

• All devices 100% surge tested.

• Suppresses transients up to 2 kW @ 8/20 µs.

• Other screening in reference to MIL-PRF-19500 is also available. Refer to MicroNote 129 for more

details on the screening options.

(See part nomenclature for all options.)

• Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.

• 3σ lot norm screening performed on standby current ID.

• RoHS compliant versions available.

APPLICATIONS / BENEFITS

• Voltage and reverse standby (leakage) current lowest available.

• Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.

• Protection from switching transients & induced RF.

• Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.

• Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance for class 1.

Screening in

reference to

MIL-PRF-19500

available

DO-215AA

(SMBG) Package

DO-214AA

(SMBJ) Package

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

MAXIMUM RATINGS @ 25 ºC unless otherwise stated

Parameters/Test Conditions

Junction and Storage Temperature

Peak Pulse Power Dissipation (1)

Off-State Power Dissipation

Tclamping (0 volts to V(BR) min)

Forward Voltage @ 30 A (3)

Solder Temperature @ 10 s

8/20 us

10/1000us

@ TL < 25 ºC

@ TA = 25 ºC

Symbol

TJ and

T STG

P PP

PD

VF

T SP

Value

-65 to +150

2000

300

5

1.38 (2)

<100

1.2

260

Notes: 1. With impulse repetition rate (duty factor) of 0.01 maximum (also Figure 1 and 4).

2. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page).

3. Peak impulse of 8.3 ms half-sine wave.

Unit

oC

W

W

ps

V

oC

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

RF01019, Rev. B (2/11/13)

©2013 Microsemi Corporation

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