MXSMBJ2K3.3 查看數據表（PDF） - Microsemi Corporation
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MXSMBJ2K3.3 Datasheet PDF : 6 Pages
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MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
MECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements.
• TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-750, method 2026.
• MARKING: Part number.
• POLARITY: Cathode end banded.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: 0.1 grams (approximate).
• See package dimensions on last page.
PART NOMENCLATURE
M SM B G 2K 3.0 (e3)
Reliability Level*
M
MA
MX
MXL
*(see MicroNote 129)
Surface Mount Package
Package Size
Lead Form
G = Gull-Wing
J = J-Bend
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Stand-Off Voltage (VWM)
(see Electrical Characteristics
table)
2 kW Transient Suppression
Symbol
VW M
PPP
V (BR)
ID
IPP
VC
I ( BR)
SYMBOLS & DEFINITIONS
Definition
Working Peak (Standoff) Voltage - The maximum peak voltage that can be applied over the operating temperature
range. This is also referred to as standoff voltage.
Peak Pulse Power - Rated random recurring peak impulse power dissipation.
Breakdown Voltage - The minimum voltage the device will exhibit at a specified current.
Standby Current - The current at the rated standoff voltage (VWM).
Peak Pulse Current - The peak current during the impulse.
Clamping Voltage - Clamping voltage at IPP (Peak Pulse Current) at the specified pulse conditions (typically shown
as maximum value).
Breakdown Current – The current used for measuring breakdown voltage V(BR).
ELECTRICAL CHARACTERISTICS @ 25 ºC
PART NUMBER
Gull-Wing
MSMBG2K3.0
MSMBG2K3.3
MSMBG2K4.0
MSMBG2K4.5
MSMBG2K5.0
J-Bend
MSMBJ2K3.0
MSMBJ2K3.3
MSMBJ2K4.0
MSMBJ2K4.5
MSMBJ2K5.0
BREAKDOWN BREAKDOWN
VOLTAGE
CURRENT
Minimum
RATED
STANDOFF
VOLTAGE
MAX
STANDBY
CURRENT
MAX
CLAMPING
VOLTAGE
PEAK
PULSE
CURRENT
TEMPERATURE
COEFFICIANT
of V (BR)
V (BR)
V
4.3
4.6
5.0
5.4
5.9
I (BR)
mA
50
50
50
50
50
V WM
ID @ VWM VC @ IPP
I PP
V
µA
V
A
3.0
1500
5.4
10
3.3
700
5.8
10
4.0
400
6.3
10
4.5
50
6.6
10
5.0
5
7.6
10
α V(BR)
% / oC
+0/ -0.05
±0.025
±0.030
±0.040
+0.050
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
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