NRVB130LSFT1G 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

NRVB130LSFT1G

Surface Mount Schottky Power Rectifier

ON Semiconductor 

MBR130LSFT1G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

30

V

VRWM

VR

Average Rectified Forward Current (At Rated VR, TL = 117°C)

IO

1.0

A

Peak Repetitive Forward Current

(At Rated VR, Square Wave, 100 kHz, TL = 110°C)

IFRM

2.0

A

Non−Repetitive Peak Surge Current

(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)

IFSM

40

A

Storage Temperature

Operating Junction Temperature

Voltage Rate of Change (Rated VR, TJ = 25°C)

THERMAL CHARACTERISTICS

Tstg

TJ

dv/dt

−55 to 150

°C

−55 to 125

°C

10,000

V/ms

Thermal Resistance, Junction−to−Lead (Note 1)

Thermal Resistance, Junction−to−Lead (Note 2)

Thermal Resistance, Junction−to−Ambient (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 2)

Rtjl

26

°C/W

Rtjl

21

Rtja

325

Rtja

82

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Mounted with minimum recommended pad size, PC Board FR4.

2. Mounted with 1 in. copper pad (Cu area 700 mm2).

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 3)

VF

TJ = 25°C TJ = 100°C

V

(IF = 0.1 A)

(IF = 0.7 A)

(IF = 1.0 A)

0.29

0.18

0.36

0.27

0.38

0.30

Maximum Instantaneous Reverse Current (Note 3)

IR

TJ = 25°C TJ = 100°C

mA

(VR = 30 V)

1.0

25

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.

http://onsemi.com

2

Share Link: