DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HLMP-0301 查看數據表(PDF) - Avago Technologies

零件编号
产品描述 (功能)
生产厂家
HLMP-0301
Avagotech
Avago Technologies Avagotech
HLMP-0301 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical/Optical Characteristics at TA = 25°C
Sym. Description
HLMP-R100
HLMP-0301
HLMP-0401
HLMP-0504
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Test
Conditions
2q1/2 Included Angle
100
100
100
100
Deg. Note 1.
Between Half
Fig. 6
Luminous
Intensity Points
lP
Peak Wavelength
645
635
583
565
nm
Measure-
ment at
Peak
ld
Dominant
Wavelength
637
626
585
569
nm
Note 2.
Dl1/2 Spectral Line
20
40
36
28
nm
Halfwidth
ts
Speed of Response
30
90
90
500
ns
C
Capacitance
30
16
18
18
pF
VF = 0;
f = 1 MHz
RqJ-PIN Thermal Resistance
260
260
260
260
°C/W Junction
to Cathode
Lead
VF
Forward Voltage
1.8 2.2
1.9 2.6
2.1 2.6
2.2 3.0 V
IF = 20 mA
Figure 2.
VR
Reverse Breakdown 5.0
5.0
5.0
5.0
V
IR = 100 μA
Voltage
hv
Luminous Efficacy
80
145
500
595
lm/W Note 3.
Notes:
1. q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
2. The dominant wavelength, ld, is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the
device.
3. Radiant intensity, Ie, in watts/steradian, may be found from the equation Ie = Iv/hv, where Iv is the luminous intensity in candelas and hv is the
luminous efficacy in lumens/watt.
1.0
GREEN
AlGaAs RED
TA = 25 °C
0.5
YELLOW
0
500
550
Figure 1. Relative intensity vs. wavelength.
600
650
WAVELENGTH – nm
HIGH EFFICIENCY RED
700
750
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]