FSL4110LR 查看數據表（PDF） - Fairchild Semiconductor
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FSL4110LR Datasheet PDF : 15 Pages
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Electrical Characteristics
TJ =-40C to 125C unless otherwise specified.
Symbol
Parameter
Conditions
SenseFET Section
BVDSS
IDSS
Drain-Source Breakdown Voltage(12) VGS = 0 V, ID = 250 µA
Zero-Gate-Voltage Drain Current(12) VDS = 1000 V, VGS = 0 V
RDS(ON)
Drain-Source On-State
Resistance(12)
VGS = 10 V, ID = 1.0 A
CISS
COSS
td(on)
tr
td(off)
tf
Input Capacitance(12)(13)
Output Capacitance(12)(13)
Turn-On Delay Time(12)
Rise Time(12)
Turn-Off Delay Time(12)
Fall Time(12)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDD = 500 V, ID = 1.0 A,
VGS = 10 V, Rg = 25 Ω
Control Section
fS
Switching Frequency(12)
fM
Frequency Modulation(13)
VCC = 14 V, VFB = 4 V
DMAX
IFB
VSTART
VSTOP
tS/S
Maximum Duty Ratio
Feedback Source Current(12)
UVLO Threshold Voltage
Internal Soft-Start Time
VCC = 14 V, VFB = 4 V
VFB = 0 V
VFB = 0 V, VCC Sweep
After Turn-on, VFB = 0 V
VSTR = 40 V, VCC Sweep
Burst-Mode Section
VBURH
VBURL
VHYS
Burst-Mode Voltage(12)
VCC = 14 V, VFB Sweep
Protection Section
ILIM
VOLP
Peak Drain Current Limit(12)
Overload Protection(12)
VAOCP
Abnormal Over-Current
Protection(13)
tLEB Leading-Edge Blanking Time(13)(14)
tCLD Current Limit Delay Time(13)
VOVP Over-Voltage Protection
VINH
Line Over-Voltage Protection
Threshold Voltage
di/dt = 240 mA/s
VCC = 14 V, VFB Sweep
VCC Sweep
VCC = 14 V, VIN Sweep
VINHYS
Line Over-Voltage Protection
Hysteresis(12)
VCC = 14 V, VIN Sweep
tDELAY
tRESTART
TSD
THYS
THYS
Overload Protection Delay
Restart Time After Protection(13)
Thermal Shutdown Temperature(13)
Shutdown Temperature
Hysteresis (FSL4110LRN)
Hysteresis (FSL4110LRLX)
© 2014 Fairchild Semiconductor Corporation
FSL4110LR • Rev. 1.3
5
Min. Typ. Max. Unit
1000
V
250
A
10
Ω
367 477
pF
37.5 48.8 pF
13.7
ns
14
ns
33
ns
45
ns
46.5 50.0 53.5 kHz
±1.5
kHz
61
67
73
%
70 100 130
µA
11
12
13
V
7
8
9
20
ms
0.45 0.50 0.55
V
0.35 0.40 0.45
V
100
mV
0.45 0.52 0.59
A
4.0
4.4
4.8
V
1.0
V
250
ns
200
ns
23.0 24.5 26.0
V
1.9
2.0
2.1
V
100
mV
100
ms
1.6
s
130 140 150
60
C
30
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