HA-5002-9(1998) 查看數據表（PDF） - Intersil

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HA-5002-9
(Rev.:1998)

110MHz, High Slew Rate, High Output Current Buffer

Intersil 

HA-5002

Die Characteristics

DIE DIMENSIONS:

81 mils x 80 mils x 19 mils

2050µm x 2030µm x 483µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 20kÅ ±2kÅ

PASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

SUBSTRATE POTENTIAL (Powered Up):

V1-

TRANSISTOR COUNT:

27

PROCESS:

Bipolar Dielectric Isolation

Metallization Mask Layout

HA-5002

V1-

IN

V1+ (ALT)

V1- (ALT)

V2+

V2-

V1+

OUT

8

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