SUM40N15-38 查看數據表（PDF） - Vishay Semiconductors
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SUM40N15-38 Datasheet PDF : 8 Pages
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SUM40N15-38
Vishay Siliconix
N-Channel 150-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
150
0.038 at VGS = 10 V
0.042 at VGS = 6 V
ID (A)
40
38
TO-263
FEATURES
• TrenchFET® Power MOSFETs
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
G DS
Top View
Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
150
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
40
23
A
Pulsed Drain Current
IDM
80
Avalanche Current
IAR
40
Repetitive Avalanche Energya
L = 0.1 mH
EAR
80
mJ
Maximum Power Dissipationa
TC = 25 °C
166b
TA = 25 °Cc
PD
3.75
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount TO-263c)
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
Symbol
RthJA
RthJC
Limit
40
0.9
Unit
°C/W
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