IRF710S(2020) 查看數據表（PDF） - Vishay Semiconductors

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IRF710S
(Rev.:2020)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRF710S, SiHF710S

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- V DD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

300

ID

Top 0.89 A

250

1.3 A

Bottom 2.0 A

200

150

100

50

0 VDD = 50 V

25

50

75

100

125

150

91042_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S20-0682-Rev. D, 07-Sep-2020

5

Document Number: 91042

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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