STGWA15H120DF2 查看數據表（PDF） - STMicroelectronics
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STGWA15H120DF2 Datasheet PDF : 18 Pages
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STGW15H120DF2, STGWA15H120DF2
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr
Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
Ets Total switching losses
td(on) Turn-on delay time
tr
Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
Ets Total switching losses
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
1. Energy losses include reverse recovery of the external diode.
2. Turn-off losses include also the tail of the collector current.
-
23
- ns
- 7.4 - ns
- 1621 - A/µs
111 - ns
- 111 - ns
- 0.38 - mJ
- 0.37 - mJ
- 0.75 - mJ
- 23.5 - ns
-
8
- ns
- 1525 - A/µs
- 118 - ns
- 253 - ns
- 0.65 - mJ
- 0.93 - mJ
- 1.58 - mJ
5
- µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/ /dt
Err
trr
Qrr
Irrm
dIrr/ /dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
IF = 15 A, VR = 600 V,
di/dt=1000 A/µs,
VGE = 15 V,
see Figure 28
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
IF = 15 A, VR = 600 V,
di/dt=1000 A/µs,
VGE = 15 V, TJ = 175 °C,
see Figure 28
Reverse recovery energy
-
231
-
ns
- 0.72 - µC
-
14.5 -
A
- 1200 - A/µs
-
0.4
- mJ
-
414
-
ns
-
2.2
- µC
-
21.5 -
A
-
632 - A/µs
-
1.3
- mJ
DocID023751 Rev 5
5/18
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