SI7135DP 查看數據表（PDF） - Vishay Semiconductors
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SI7135DP Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7135DP
Vishay Siliconix
100
VGS = 10 thru 4 V
80
60
40
20
0
0.0
VGS = 3 V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.0060
0.0055
0.0050
VGS = 4.5 V
0.0045
0.0040
0.0035
0.0030
VGS = 10 V
0.0025
0.0020
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 28 A
8
6
VDS = 7.5 V
VDS = 15 V
VDS = 22.5 V
4
2
1.2
1.0
TC = - 55 °C
0.8
0.6
TC = 25 °C
0.4
0.2
TC = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
12 000
Ciss
8000
4000
0
0
Coss
Crss
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.5
1.2
0.9
VGS = 10 V
VGS = 4.5 V
0
0
50
100
150
200
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S-81588-Rev. A, 07-Jul-08
3
Document Number: 68807
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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