LH28F016SU 查看數據表（PDF） - Sharp Electronics
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LH28F016SU Datasheet PDF : 37 Pages
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16M (1M × 16, 2M × 8) Flash Memory
LH28F016SU
AC Characteristics - Read Only Operations1 Continued
TA = 0°C to +70°C
SYMBOL
PARAMETER
VCC = 5.0 V ± 0.25 V VCC = 5.0 V ± 0.5 V
UNITS
MIN.
MAX.
MIN.
MAX.
tAVAV Read Cycle Time
70
80
ns
tAVEL Address Setup to CE» Going Low
10
10
ns
tAVGL Address Setup to OE» Going Low
0
0
ns
tAVQV Address to Output Delay
70
80
ns
tELQV CE» to Output Delay
70
80
ns
tPHQV RP» High to Output Delay
400
480
ns
tGLQV OE» to Output Delay
30
35
ns
tELQX CE» to Output in Low Z
0
0
ns
tEHQZ CE» to Output in High Z
25
30
ns
tGLQX OE» to Output in Low Z
0
0
ns
tGHQZ OE» to Output in High Z
25
30
ns
tOH
Output Hold from Address, CE» or
OE » change, whichever occurs first
0
0
ns
tFLQV
tFHQV
tFLQZ
tELFL
tELFH
BYTE to Output Delay
BYTE Low to Output in High Z
CE » Low to BYTE High or Low
70
80
ns
25
30
ns
5
5
ns
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE » may be delayed up to tELQV - tGLQV after the falling edge of CE » without impact on tELQV.
3. Sampled, not 100% tested.
4. This timing parameter is used to latch the correct BSR data onto the outputs.
NOTE
3, 4
3, 4
2
2
3
3
3
3
3
3
3
3
23
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