LH28F016SU 查看數據表（PDF） - Sharp Electronics

零件编号

产品描述 (功能)

生产厂家

LH28F016SU

16M (1M × 16, 2M × 8) Flash Memory

Sharp Electronics 

LH28F016SU

16M (1M × 16, 2M × 8) Flash Memory

56-PIN TSOP

TOP VIEW

WP 56

WE 55

OE 54

RY/BY 53

DQ15 52

DQ7 51

DQ14 50

DQ6 49

GND 48

DQ13 47

DQ5 46

DQ12 45

DQ4 44

VCC 43

GND 42

DQ11 41

DQ3 40

DQ10 39

DQ2 38

VCC 37

DQ9 36

DQ1 35

DQ8 34

DQ0 33

A0 32

BYTE 31

NC 30

NC 29

1 3/5

2 CE1

3 NC

4 A20

5 A19

6 A18

7 A17

8 A16

9 VCC

10 A15

11 A14

12 A13

13 A12

14 CE0

15 VPP

16 RP

17 A11

18 A10

19 A9

20 A8

21 GND

22 A7

23 A6

24 A5

25 A4

26 A3

27 A2

28 A1

28F016SUT-17

Figure 2. TSOP Reverse Bend Configuration

INTRODUCTION

Sharp’s LH28F016SU 16M Flash Memory is a revo-

lutionary architecture which enables the design of truly

mobile, high performance, personal computing and com-

munication products. With innovative capabilities, 5 V

single voltage operation and very high read/write per-

formance, the LH28F016SU is also the ideal choice for

designing embedded mass storage memory systems.

The LH28F016SU is a very high density, highest per-

formance non-volatile read/write solution for solid-state

storage applications. Its symmetrically blocked archi-

tecture (100% compatible with the LH28F008SA 8M

Flash memory), extended cycling, low power 3.3 V

operation, very fast write and read performance and

selective block locking provide a highly flexible memory

component suitable for high density memory cards,

Resident Flash Arrays and PCMCIA-ATA Flash Drives.

The LH28F016SU’s dual read voltage enables the

design of memory cards which can interchangeably be

read/written in 3.3 V and 5.0 V systems. Its x8/x16

architecture allows the optimization of memory to pro-

cessor interface. The flexible block locking option

enables bundling of executable application software in

a Resident Flash Array or memory card. Manufactured

on Sharp’s 0.55 µm ETOX™ process technology, the

LH28F016SU is the most cost-effective, high-density

3.3 V flash memory.

DESCRIPTION

The LH28F016SU is a high performance 16M

(16,777,216 bit) block erasable non-volatile random

access memory organized as either 1M × 16 or 2M × 8.

The LH28F016SU includes thirty-two 64K (65,536)

blocks or thirty-two 32-KW (32,768) blocks. A chip

memory map is shown in Figure 4.

The implementation of a new architecture, with many

enhanced features, will improve the device operating

characteristics and results in greater product reliability

and ease of use.

Among the significant enhancements of the

LH28F016SU:

• 5 V Write/Erase Operation (5 V VPP)

• 3.3 V Low Power Capability (2.7 V VCC Read)

• Improved Write Performance

• Dedicated Block Write/Erase Protection

A 3/5 » input pin reconfigures the device internally for

optimized 3.3 V or 5.0 V read/write operation.

The LH28F016SU will be available in a 56-pin,

1.2 mm thick × 14 mm × 20 mm TSOP (Type I) pack-

age.This form factor and pinout allow for very high board

layout densities.

2

Share Link: