BZW04-10-E3/51 查看數據表（PDF） - Vishay Semiconductors
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BZW04-10-E3/51 Datasheet PDF : 7 Pages
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www.vishay.com
BZW04-5V8 thru BZW04-376
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
DO-41 (DO-204AL)
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
VBR (uni-directional)
5.8 V to 376 V
6.45 V to 462 V
VBR (bi-directional)
PPPM
PD
IFSM (uni-directional only)
TJ max.
Polarity
6.45 V to 462 V
400 W
1.5 W
40 A
175 °C
Uni-directional, bi-directional
Package
DO-41 (DO-204AL)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use B suffix (e.g.
BZW04P-6V4B).
Electrical characteristics apply in both directions.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-41 (DO-204AL), molded epoxy over passivated
chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BZW04-213(B) to BZW04-376(B) for commercial grade only
Polarity: for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unles otherwise noted)
PARAMETER
SYMBOL
LIMIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
PPPM
400
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
See next table
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
PD
1.5
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)
VF
3.5/5.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above
UNIT
W
A
W
A
V
°C
Revision: 16-Jan-18
1
Document Number: 88316
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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