SPN02N60C3(2004) 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

SPN02N60C3
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

Rev. 2.1

SPN02N60C3

13 Typ. switching time

t = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=25Ω

90

ns

tdoff

70

60

50

40

30

20

tf

tdon

10 tr

0

0.25 0.5 0.75 1 1.25 1.5 A

2

ID

15 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=25Ω

0.01

mWs

14 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=0.4A

85000

V/ns

45000

25000

dv/dt(on)

5000

0

dv/dt(off)

40 80

120 160 200

Ω 280

RG

16 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=0.4A

0.0425

mWs

0.008

0.0325

0.007

Eon

0.006

0.0275

Eon

0.0225

0.005

0.0175

0.004

0.003

0.0125

Eoff

Eoff

0.0075

0.002

0.25 0.5 0.75 1 1.25 1.5 A

2

ID

0.0025

0

Page 8

40 80 120 160 200 Ω 280

RG

2004-03-01

Share Link: