STF28NM60ND 查看數據表（PDF） - STMicroelectronics

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STF28NM60ND

N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

STB28NM60ND, STF28NM60ND,

STP28NM60ND, STW28NM60ND

N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs

in D²PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet - production data

TAB

2

3

1

D2PAK

TAB

3

2

1

TO-220FP

3

2

1

TO-220

3

2

1

TO-247

Figure 1. Internal schematic diagram

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Features

Order codes

VDS @

TJ max.

RDS(on) max

ID

STB28NM60ND

STF28NM60ND

650 V

STP28NM60ND

0.150 Ω

23 A

STW28NM60ND

• Intrinsic fast-recovery body diode

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche

capabilities

Applications

• Switching applications

Description

These FDmesh™ II Power MOSFETs with

6

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

$0Y

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

Order codes

STB28NM60ND

STF28NM60ND

STP28NM60ND

STW28NM60ND

Table 1. Device summary

Marking

Packages

2

D PAK

28NM60ND

TO-220FP

TO-220

TO-247

Packaging

Tape and reel

Tube

May 2014

This is information on a product in full production.

DocID024520 Rev 3

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