STF28NM60ND 查看數據表（PDF） - STMicroelectronics

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STF28NM60ND

N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND

Electrical characteristics

Symbol

Table 7. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

(1)

ISDM Source-drain current (pulsed)

-

(2)

VSD

Forward on voltage

ISD = 23 A, VGS = 0

-

23 A

92 A

1.6 V

trr Reverse recovery time

- 170

ISD = 23 A, VDD = 60 V

ns

Qrr

IRRM

Reverse recovery charge

Reverse recovery current

di/dt=100 A/μs

(see Figure 17)

- 1160

nC

- 14

A

trr Reverse recovery time

ISD = 23 A,VDD = 60 V - 237

ns

Qrr Reverse recovery charge

di/dt=100 A/μs,

TJ = 150 °C

- 2090

nC

IRRM Reverse recovery current

(see Figure 17)

- 18

A

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.

DocID024520 Rev 3

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