W971GG8SB-3 查看數據表（PDF） - Winbond
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W971GG8SB-3 Datasheet PDF : 87 Pages
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W971GG8SB
4. KEY PARAMETERS
SPEED GRADE
DDR2-1066 DDR2-800 DDR2-667
SYM.
Bin(CL-tRCD-tRP)
6-6-6 5-5-5/6-6-6 5-5-5
Part Number Extension
-18
-25/25I
-3
Min. 1.875 nS
@CL = 7
Max.
7.5 nS
Min. 1.875 nS
2.5 nS
@CL = 6
Max.
7.5 nS
8 nS
tCK(avg) Average clock period
@CL = 5
Min.
Max.
2.5 nS
7.5 nS
2.5 nS
8 nS
3 nS
8 nS
@CL = 4
Min.
Max.
3 nS
7.5 nS
3.75 nS
8 nS
3.75 nS
8 nS
Min.
@CL = 3
Max.
5 nS
8 nS
5 nS
8 nS
tRCD Active to Read/Write Command Delay Time
Min. 11.25 nS
12.5 nS
15 nS
tREFI
Average periodic
refresh Interval
-40°C ≤ TCASE ≤ 85°C
0°C ≤ TCASE ≤ 85°C
85°C < TCASE ≤ 95°C
Min.
Min.
Min.
*2
7.8 μS*1
3.9 μS*4
7.8 μS*2, 3
7.8 μS*1
3.9 μS*4
*2
7.8 μS*1
3.9 μS*4
tRP Precharge to Active Command Period
Min. 11.25 nS
12.5 nS
15 nS
tRC Active to Ref/Active Command Period
Min. 51.25 nS
52.5 nS
55 nS
tRAS Active to Precharge Command Period
Min.
40 nS
40 nS
40 nS
IDD0 Operating one bank active-precharge current
Max.
75 mA
70 mA
65 mA
IDD1 Operating one bank active-read-precharge current Max.
80 mA
75 mA
70 mA
IDD4R Operating burst read current
Max. 125 mA
105 mA
95 mA
IDD4W Operating burst write current
Max. 135 mA
110 mA
100 mA
IDD5B Burst refresh current
Max. 145 mA
130 mA
120 mA
IDD6 Self refresh current (TCASE ≤ 85°C)
Max.
8 mA
8 mA
8 mA
IDD7 Operating bank interleave read current
Max. 190 mA
185 mA
160 mA
Notes:
1. All speed grades support 0°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
2. For -18, -25 and -3 speed grades, -40°C ≤ TCASE < 0°C is not available.
3. 25I speed grades support -40°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
4. For all speed grade parts, TCASE is able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS
period ( tREFI = 3.9 µS) and to enter to Self Refresh mode at this high temperature range via A7 “1” on EMR (2).
Publication Release Date: Jan. 09, 2015
Revision: A01
-5-
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