VS-1N5818-M3 查看數據表（PDF） - Vishay Semiconductors
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VS-1N5818-M3 Datasheet PDF : 6 Pages
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10
1
T = 150 °C
T = 125 °C
T = 25 °C
0.1
0
0.2 0.4 0.6 0.8
1 1.2
93256_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0
10
20
30
40
93256_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25°C
VS-1N5818, VS-1N5818-M3
Vishay Semiconductors
160
140
DC
120
100
80 Square wave (D = 0.50)
Rated VR applied
60 see note (1)
40
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93256_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Typical Allowable Lead Temperature vs.
Average Forward Current
0.8
0.6
RMS Limit
0.4
0.2
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DDCC
0
0
0.5
1
1.5
93256_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
100
10
0
10
20
30
40
50
10
10
100
1000
10 000
93256_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93256_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Typical Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Sep-11
3
Document Number: 93256
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