NUP6101DMR2 查看數據表（PDF） - ON Semiconductor
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NUP6101DMR2 Datasheet PDF : 4 Pages
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NUP6101DMR2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Stand–off Voltage
VBRWM
–
–
5.0
V
Reverse Breakdown Voltage @ It = 1.0 mA
VBR
6.0
–
–
V
Reverse Leakage Current @ VRWM = 5.0 Volts, T = 25°C
IR
–
–
20
mA
Maximum Clamping Voltage @ IPP = 1.0 A, 8 x 20 mS
VC
–
–
9.8
V
Maximum Clamping Voltage @ IPP = 5.0 A, 8 x 20 mS
VC
–
11
V
Maximum Peak Pulse Current
IPP
–
–
17
A
Junction Capacitance Between I/O Pins and Ground @ VR = 0 V, 1.0 MHz
CJ
–
–
400
pF
1000
100
10
NOTE: Non–Repetitive Surge.
1
1
10
100
t, TIME (ms)
Figure 1. Pulse Width
1000
100
tr
90
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 2. 8 × 20 ms Pulse Waveform
http://onsemi.com
2
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