NTMFS4833NT3G(2006) 查看數據表（PDF） - ON Semiconductor

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NTMFS4833NT3G
(Rev.:2006)

Power MOSFET

ON Semiconductor 

NTMFS4833N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min Typ Max Unit

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time

Charge Time

Discharge Time

Reverse Recovery Charge

PACKAGE PARASITIC VALUES

VSD

tRR

ta

tb

QRR

VGS = 0 V,

IS = 30 A

TJ = 25°C

−

0.8

1.0

V

TJ = 125°C

−

0.68

−

−

38

−

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

−

19

−

ns

−

19

−

−

36

−

nC

Source Inductance

LS

Drain Inductance

Gate Inductance

LD

LG

TA = 25°C

Gate Resistance

RG

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

−

0.50

−

nH

−

0.005

−

nH

−

1.84

−

nH

−

1.0

−

W

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