NTMFS4833NT1G(2006) 查看數據表（PDF） - ON Semiconductor
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NTMFS4833NT1G Datasheet PDF : 7 Pages
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NTMFS4833N
TYPICAL PERFORMANCE CURVES
200
175
150
125
100
75
50
25
0
0
4.2 V thru 10 V
TJ = 25°C
VGS = 4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
200
VDS ≥ 10 V
175
150
125
100
TJ = 125°C
75
50
TJ = 25°C
25
TJ = −55°C
0
0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.010
0.008
0.006
0.004
0.002
ID = 30 A
TJ = 25°C
0.004
TJ = 25°C
0.003
0.002
0.001
VGS = 4.5 V
VGS = 11.5 V
0
2
4
6
8
10
12
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0
25 50
75 100 125 150 175 200
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.75
ID = 30 A
1.5 VGS = 10 V
1.25
1.0
0.75
0.5
100,000
VGS = 0 V
10,000
1,000
TJ = 150°C
TJ = 125°C
0.25
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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