NTMFS4833NT1G 查看數據表（PDF） - ON Semiconductor
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NTMFS4833NT1G Datasheet PDF : 8 Pages
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NTMFS4833N
TYPICAL PERFORMANCE CURVES
8000
7000 Ciss
TJ = 25°C
6000
Ciss
5000
4000
Crss
3000
2000
1000
Coss
0
VDS = 0 V VGS = 0 V
10
5
0
5
10
15
20
25
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 15 V
ID = 15 A
VGS = 11.5 V
100
td(off)
tf
tr
td(on)
10
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
10 ms
100
100 ms
10
1 ms
1
0.1
0.01
0.01
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 ms
dc
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
12
QT
10
VGS
8
6
4 Q1
Q2
2
ID = 30 A
TJ = 25°C
0
0 10 20 30 40 50 60 70 80 90
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25
TJ = 25°C
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
650
600
550
500
450
400
350
300
250
200
150
100
50
0
25
ID = 35 A
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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