DXT13003DK-13 查看數據表（PDF） - Diodes Incorporated.

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DXT13003DK-13

450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252

Diodes Incorporated. 

DXT13003DK

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

DC current transfer Static ratio (Note 12)

Symbol

Min

Typ

BVCES

700

—

BVCEO

450

—

BVEBO

9

—

ICEV

—

—

20

—

hFE

16

—

5

—

Collector-Emitter Saturation Voltage (Note 12) VCE(sat)

—

—

—

—

Base-Emitter Saturation Voltage (Note 12)

—

VBE(sat)

—

—

—

Output Capacitance

Transition Frequency

Turn-on Time with Resistive Load

Storage Time with Resistive Load

Fall Time with Resistive Load

Cob

—

18

fT

4

—

ton

—

0.35

ts

—

2.31

tf

—

0.21

Note:

12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

Max

—

—

—

10

40

30

25

0.3

0.4

1.0

1.2

—

—

—

—

—

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Unit

V

V

V

µA

—

—

V

V

pF

MHz

µs

Test Condition

IC = 100µA, VBE = 0V

IC = 100µA

IE = 100µA

VCE = 700V, VBE = -1.5V

IC = 20mA, VCE = 10V

IC = 0.5A, VCE = 2V

IC = 1.0A, VCE = 2V

IC = 0.5A, IB = 0.1A

IC = 1A, IB = 0.25A

IC = 0.5A, IB = 0.1A

IC = 1A, IB = 0.25A

VCB = 10V, f = 0.1MHz

IC = 0.1A, VCE = 10V

IC = 1A,VCC = 125V, IB1 = 0.2A,

IB2 = -0.2A

DXT13003DK

Datasheet Number: DS37297 Rev. 1 - 2

4 of 6

www.diodes.com

May 2014

© Diodes Incorporated

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