DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FSQ0465RUWDTU 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FSQ0465RUWDTU Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Parameter
Min.
Max.
Unit
Vstr
Vstr Pin Voltage
500
V
VDS
Drain Pin Voltage
650
V
VCC
Supply Voltage
21
V
VFB
Feedback Voltage Range
-0.3
13.0
V
VSync
Sync Pin Voltage
-0.3
13.0
V
IDM
Drain Current Pulsed
8.4
A
IDSW
Continuous Drain Switching
Current(6)
TC = 25°C
3.8
A
EAS
Single Pulsed Avalanche Energy(7)
100
mJ
PD
Total Power Dissipation (TC=25°C)
45
W
TJ
Operating Junction Temperature
Internally limited
°C
TA
Operating Ambient Temperature
-25
+85
°C
TSTG
Storage Temperature
-55
+150
°C
Human Body Model,
JESD22-A114
2.0
kV
ESD
Electrostatic Discharge
Charged Device Model,
JESD22-C101
2.0
kV
Notes:
6. Repetitive peak switching current when inductor load is assumed : limited by maximum duty and maximum junction
temperature.
IDS
DMAX
fSW
7. L=45mH, IAS=2.1A, starting TJ=25°C.
Thermal Impedance
TA = 25°C unless otherwise specified.
Symbol
θJA
θJC
Parameter
Junction-to-Ambient Thermal Resistance(8)
Junction-to-Case Thermal Resistance(9)
Notes:
8. Free standing with no heat-sink under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
Package
TO-220F-6L
Value
50
2.8
Unit
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
FSQ0465RU Rev. 1.0.0
5
www.fairchildsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]