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FSQ0465RUWDTU 查看數據表(PDF) - Fairchild Semiconductor

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FSQ0465RUWDTU Datasheet PDF : 22 Pages
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Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Protection Section
ILIMIT
VSD
IDELAY
tLEB
tOSP
VOSP
tOSP_FB
TSD
Hys
Peak Current Limit
Shutdown Feedback Voltage
Shutdown Delay Current
Leading-Edge Blanking Time(11)
TJ=25°C, di/dt=480mA/µs
VCC=15V
VFB=5V
1.6 1.8 2.0 A
5.5 6.0 6.5 V
4
5
6 µA
250
ns
Threshold Time
TJ= 25°C
1.2 1.4 µs
Output Short Threshold Feedback
Protection(11) Voltage
OSP Triggered When tON < tOSP,
VFB > VOSP and Lasts Longer
1.8
2.0
V
Feedback Blanking Time than tOSP_FB
2.0 2.5 3.0 µs
Thermal
Shutdown Temperature
Shutdown(11) Hysteresis
+125 +140 +155
°C
+60
Sync Section
VSH1
VSL1
tsync
VSH2
VSL2
Sync Threshold Voltage 1
Sync Delay Time(11)(12)
Sync Threshold Voltage 2
VCLAMP Low Clamp Voltage
Total Device Section
VCC = 15V, VFB=2V
VCC = 15V, VFB=2V
ISYNC_MAX=800µA,
ISYNC_MIN=50µA
1.0 1.2 1.4
V
0.8 1.0 1.2
230
ns
4.3 4.7 5.1
V
4.0 4.4 4.8
0.0 0.4 0.8 V
IOP
ISTART
ICH
VSTR
Operating Supply Current
Start Current
Startup Charging Current
Minimum VSTR Supply Voltage
VCC=13V
VCC=10V
(Before VCC Reaches VSTART)
VCC=0V, VSTR=Minimum 50V
1
3
5 mA
350 450 550 µA
0.65 0.85 1.00 mA
26
V
Notes:
10. Propagation delay in the control IC.
11. Guaranteed by design; not tested in production.
12. Includes gate turn-on time.
© 2009 Fairchild Semiconductor Corporation
FSQ0465RU Rev. 1.0.0
7
www.fairchildsemi.com

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