IPF06N03LAG 查看數據表（PDF） - Infineon Technologies
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IPF06N03LAG Datasheet PDF : 12 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
10
IPD06N03LA G
IPS06N03LA G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
IPF06N03LA G
IPU06N03LA G
9
8
2
7
98 %
6
typ
5
400 µA
1.5
40 µA
4
1
3
2
0.5
1
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. Capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25 °C
Ciss
103
1000
Coss
100
175 °C
175 °C, 98%
102
100
Crss
25 °C, 98%
10
Rev. 2.0
10
0
5
10
15
20
25
30
V DS [V]
1
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2006-05-11
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