SI1411DH-T1-E3 查看數據表（PDF） - Vishay Semiconductors
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SI1411DH-T1-E3 Datasheet PDF : 6 Pages
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New Product
Si1411DH
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
−150
2.6 @ VGS = −10 V
2.7 @ VGS = −6 V
ID (A)
−0.52
−0.51
Qg (Typ)
4.2 nC
FEATURES
D TrenchFETr Power MOSFETS
D Small, Thermally Enhanced SC-70 Package
D Ultra Low On-Resistance
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
Product Is
Completely
Pb-free
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
BG XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1411DH-T1—E3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Single Pulse Avalanche Current
Single Pluse Avalanch Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
−150
"20
−0.52
−0.42
−0.38
−0.3
−0.8
−1.3
−0.83
−2.1
0.22
1.56
1.0
0.81
0.52
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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