MCP795W20-I/ST 查看數據表（PDF） - Microchip Technology

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MCP795W20-I/ST

2Kb EE 64B SRAM WD TED ID

Microchip Technology 

MCP795W1X/MCP795W2X

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (†)

VCC............................................................................................................................................................................. 6.5V

All inputs and outputs w.r.t. VSS ................................................................................................................. -0.6V to +6.5V

Storage temperature ...............................................................................................................................-65°C to +150°C

Ambient temperature under bias............................................................................................................... -40°C to +85°C

ESD protection on all pins.......................................................................................................................................... 4 kV

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

TABLE 1-1: DC CHARACTERISTICS

DC CHARACTERISTICS

Industrial (I): TAMB = -40°C to +85°C VCC = 1.8V to 3.6V

Param.

No.

Sym.

Characteristic

Min.

Max. Units

Test Conditions

D001

D002

D003

D004

D005

D006

VIH1 High-level input

voltage

VIL1 Low-level input

VIL2 voltage

VOL Low-level output

VOL voltage

VOH High-level output

voltage

.7 VCC

VCC+1

-0.3

-0.3

—

—

VCC -0.5

0.3VCC

0.2VCC

0.4

0.2

—

V

V VCC2.5V

V VCC < 2.5V

V IOL = 2.1 mA

V IOL = 1.0 mA, VCC < 2.5V

V IOH = -400 A

D007

D008

ILI Input leakage current

ILO Output leakage

current

±1

A CS = VCC, VIN = VSS TO VCC

±1

A CS = VCC, VOUT = VSS TO VCC

D009 CINT Internal Capacitance

—

(all inputs and

outputs)

D010 ICC Read Operating Current

—

7

pF

3

mA

D011 IDD write Write Current

—

5

mA

D012 IBAT VBAT Current

—

700

nA

D013 VTRIP VBAT Change Over

1.3

1.7

V

D014 VCCFT VCC Fall Time

300

s

D015 VCCRT VCC Rise Time

0

s

D016 VBAT VBAT Voltage Range

1.3

3.6

V

D017 ICCS Standby Current

—

1

A

Note 1: This parameter is periodically sampled and not 100% tested.

TAMB = 25°C, CLK = 1.0 MHz

VCC = 3.6V (Note 1)

VCC = 3.5V; FCLK = 5 MHz

SO = Open

VCC = 3.6V

VBAT = 1.8V @ 25°C (Note 2)

1.5V typical at TAMB = 25°C

From VTRIP (max) to VTRIP (min)

From VTRIP (min) to VTRIP (max)

—

—

2: With oscillator running.

 2011-2012 Microchip Technology Inc.

Preliminary

DS22280C-page 3

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