FDMS3606AS 查看數據表（PDF） - Fairchild Semiconductor
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FDMS3606AS Datasheet PDF : 15 Pages
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Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
VGS = 6 V
30
VGS = 4.5 V
VGS = 4 V
20
4
VGS = 3.5 V
3
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4 V
2
VGS = 4.5 V
10
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1
VGS = 6 V VGS = 10 V
0
0
10
20
30
40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
1.2
1.0
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
ID = 13 A
12
TJ = 125 oC
8
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
4
TJ = 25 oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VDS = 5 V
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
40
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
4
FDMS3606AS Rev.C4
www.fairchildsemi.com
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