FDMS3606AS 查看數據表（PDF） - Fairchild Semiconductor
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FDMS3606AS Datasheet PDF : 15 Pages
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Typical Characteristics (Q2 N-Channel) TJ = 25 oC unless otherwise noted
10
ID = 27A
8
6
4
2
VDD = 10 V
VDD = 15 V
VDD = 20 V
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 21. Capacitance vs Drain
to Source Voltage
50
10
TJ = 25 oC
TJ = 100 oC
1
0.01
TJ = 125 oC
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
200
100
1000
10
1 ms
THIS AREA IS
1 LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 120 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1s
10s
DC
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
8
FDMS3606AS Rev.C4
200
RθJC = 2 oC/W
150
VGS = 10 V
100
VGS = 4.5 V
50
Limited by Package
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 23. Maximun Continuous Drain
Current vs Case Temperature
1000
100
SINGLE PULSE
RθJA = 120 oC/W
TA = 25 oC
10
1
0.1
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 25. Single Pulse Maximum
Power Dissipation
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