IPB055N03LG 查看數據表（PDF） - Infineon Technologies
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IPB055N03LG Datasheet PDF : 10 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
10
IPP055N03L G
IPB055N03L G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
8
2
6
98 %
1.5
typ
4
1
2
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
103
1000
Ciss
Coss
100
25 °C
25 °C, 98%
175 °C, 98%
102
100
Crss
175 °C
10
101
10
0
Rev. 1.03
5
10
15
20
25
30
V DS [V]
1
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2009-09-22
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