IPB055N03LG 查看數據表（PDF） - Infineon Technologies
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IPB055N03LG Datasheet PDF : 10 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
25 °C
100 °C
150 °C
10
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
10
8
IPP055N03L G
IPB055N03L G
15 V
6V
24 V
6
4
2
1
0
10-1
100
101
102
103
0
10
20
30
40
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
34
V GS
32
30
28
26
V g s(th)
24
22
Q g(th)
20
-60
-20
20
60 100 140 180
T j [°C]
Q gs
Rev. 1.03
page 7
Qg
Q sw
Q gd
Q gate
2009-09-22
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