IPI200N15N3G(2010) 查看數據表（PDF） - Infineon Technologies

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IPI200N15N3G
(Rev.:2010)

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB200N15N3 G IPD200N15N3 G

IPI200N15N3 G IPP200N15N3 G

OptiMOS™3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

Product Summary

V DS

R DS(on),max

ID

150 V

20 mΩ

50 A

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21 *

Type

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G

IPP200N15N3 G

Package

Marking

PG-TO263-3

200N15N

PG-TO252-3

200N15N

PG-TO262-3

200N15N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

PG-TO220-3

200N15N

Value

Unit

Continuous drain current

Pulsed drain current2)

Avalanche energy, single pulse

ID

I D,pulse

E AS

T C=25 °C

T C=100 °C

T C=25 °C

I D=50 A, R GS=25 Ω

Reverse diode dv /dt

dv /dt

I D=50 A, V DS=120 V,

di /dt =100 A/µs,

T j,max=175 °C

Gate source voltage

V GS

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

1)J-STD20 and JESD22

2) See figure 3

* Except D-PAK ( TO-252 )

Rev. 2.05

page 1

50

40

200

170

6

±20

150

-55 ... 175

55/175/56

A

mJ

kV/µs

V

W

°C

2010-04-28

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