IPB072N15N3G(2010) 查看數據表（PDF） - Infineon Technologies
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IPB072N15N3G Datasheet PDF : 11 Pages
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9 Drain-source on-state resistance
R 9H"[Z#4R"T V I 9 V =H .
20
IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
10 Typ. gate threshold voltage
V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B I 9
4
3.5
V
15
3
V
2.5
10
2
10!
`e\
1.5
5
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C 4R"V 9H V =H . f & " J
104
12 Forward characteristics of reverse diode
I <4R"V H9#
@1B1=5D5B T V
103
8U__
103
102
T
T
8[__
T
102
101
T
101
0
+ 5F
8^__
20
40
60
80
100
V DS [V]
100
0
@175
0.5
1
1.5
V SD [V]
2
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